What are the latest figures on the gate driver integrated circuit (ic) market’s size and projected CAGR?
The gate driver integrated circuit (IC) market size has grown strongly in recent years. It will grow from $1.51 billion in 2024 to $1.6 billion in 2025 at a compound annual growth rate (CAGR) of 6.3%. The growth in the historic period can be attributed to increasing power efficiency requirements, the rise of industrial automation, the growth of renewable energy sources, the expansion of electric vehicles, and the rapid electrification of automobiles.
The gate driver integrated circuit (IC) market size is expected to see strong growth in the next few years. It will grow to $2.02 billion in 2029 at a compound annual growth rate (CAGR) of 6.0%. The growth in the forecast period can be attributed to smart grid development, Internet of Things (IoT) expansion, the growth of energy storage systems, healthcare technology advances, and rising aerospace and defense applications. Major trends in the forecast period include renewable energy integration, advancements in power electronics, miniaturization and efficiency, the proliferation of consumer electronics, and technological advancements.
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How have varous drivers impacted the growth of the gate driver integrated circuit (ic) market?
The increasing adoption of electric vehicles (EVs) is expected to propel the growth of the gate driver integrated circuit (IC) market going forward. The rise in electric vehicle (EV) adoption is fueled by improvements in battery technology, supportive government policies, heightened environmental consciousness, and the development of charging infrastructure. Gate driver integrated circuits (ICs) are used in electric vehicles to control the power transistors in the vehicle’s power electronics, enabling efficient and precise management of electric motor operations and battery systems. For instance, in April 2024, according to the International Energy Agency, a France-based autonomous organization, nearly 14 million new electric cars were registered globally in 2023, bringing the total to 40 million and representing a 35% year-on-year increase with 3.5 million more sales than in 2022. Therefore, the increasing adoption of electric vehicles (EVs) is driving the growth of the gate driver integrated circuit (IC) market.
What are the primary segments of the gate driver integrated circuit (ic) market?
The gate driver integrated circuit (IC) market covered in this report is segmented –
1) By Type: Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Insulated-Gate Bipolar Transistor (IGBT)
2) By Semiconductor Material: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN)
3) By Mode Of Attachment: On-Chip, Discrete
4) By Isolation Technique: Magnetic Isolation, Capacitive Isolation, Optical Isolation
5) By Application: Residential, Industrial, Commercial
Subsegments:
1) By Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET): Low Voltage Mosfet Gate Drivers, High Voltage Mosfet Gate Drivers, Single-Channel Mosfet Gate Drivers, Dual-Channel Mosfet Gate Drivers, Integrated Mosfet Gate Drivers With Protection Features
2) By Insulated-gate Bipolar Transistor (IGBT): Low Power Igbt Gate Drivers, High Power Igbt Gate Drivers, Igbt Drivers With Short Circuit Protection, Igbt Drivers With Overcurrent Protection, Integrated Igbt Gate Drivers For Motor Drives
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Which firms are leading the gate driver integrated circuit (ic) market?
Major companies operating in the gate driver integrated circuit (IC) market are Mitsubishi Electric Corporation, Broadcom Inc., Toshiba Corporation, Texas Instruments Incorporated, STMicroelectronics NV, Infineon Technologies AG, NXP Semiconductors N.V., Analog Devices Inc., Renesas Electronics Corporation, ON Semiconductor Corporation, Microchip Technology Incorporated, Rohm Semiconductor, Vishay Intertechnology, Maxim Integrated, Littelfuse Inc., Diodes Incorporated, Silicon Laboratories, Allegro MicroSystems, Semtech, Power Integrations, IXYS Corporation, Dialog Semiconductor
How will industry trends affect the trajectory of the gate driver integrated circuit (ic) market?
Major companies operating in the gate driver integrated circuit (IC) market are focusing on developing innovative products, such as gate driver integrated circuits with embedded microcontrollers, to deliver sensorless control of three-phase brushless DC motors. Gate driver ICs with embedded microcontrollers are semiconductor components that integrate both gate-driving functions and a microcontroller unit to provide advanced control and monitoring capabilities for power transistors in electronic systems. For instance, in March 2024, Toshiba Electronic Devices & Storage Corporation, a Japan-based electronics company, launched the SmartMCD Series of gate driver ICs, featuring an embedded microcontroller, aimed at enhancing the control of three-phase brushless DC motors in automotive applications. The first product in this series, the TB9M003FG, is designed for sensorless control of motors used in various automotive systems, such as water and oil pumps, fans, and blowers.
Which geographic trends are shaping the gate driver integrated circuit (ic) market, and which region has the highest market share?
Asia-Pacific was the largest region in the gate driver integrated circuit (IC) market in 2023. The regions covered in the gate driver integrated circuit (IC) market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
What Does The Gate Driver Integrated Circuit (IC) Market Report 2025 Offer?
The gate driver integrated circuit (ic) market research report from The Business Research Company offers global market size, growth rate, regional shares, competitor analysis, detailed segments, trends, and opportunities.
A gate driver integrated circuit (IC) is a semiconductor component that supplies the required voltage and current to control the gate of power transistors, facilitating efficient and precise switching in electronic systems. These are employed to enhance the performance and reliability of power management by enabling effective control of high-power transistors.
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