Global Dynamic Random Access Memory Market Growth Analysis 2024 – Forecast Market Size And Key Factors Driving Growth

Overview and Scope

Dynamic random access memory (DRAM) refers to a type of semiconductor memory that is commonly used in computers for storing data or program code needed by the processor. It stores bits of data in storage cells made up of capacitors and transistors arranged in a two-dimensional grid.

Sizing and Forecast

The dynamic random access memory market size has grown rapidly in recent years. It will grow from $68.82 billion in 2023 to $76.73 billion in 2024 at a compound annual growth rate (CAGR) of 11.5%. The growth in the historic period can be attributed to the growing adoption of generative ai boosts, rising technological requirements like data center construction, the growth of smart cities, growing manufacturing of smartphones, growth in data centers.

The dynamic random access memory market size is expected to see rapid growth in the next few years. It will grow to $120.53 billion in 2028 at a compound annual growth rate (CAGR) of 12.0%. The growth in the forecast period can be attributed to increased investment in smart infrastructure, mounting demand for educational and gaming notebooks, demand for hyper scale data centres, rising trend of working from home, and rise of iot devices. Major trends in the forecast period include transition to DDR5 standard, advanced manufacturing processes, technological advancement, advanced packaging technologies, and integration of AI-driven memory management.

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Segmentation & Regional Insights

The dynamic random access memory market covered in this report is segmented –

1) By Type: Module Dynamic Random-Access Memory (DRAM), Component Dynamic Random-Access Memory (DRAM)
2) By Technology : Synchronous Dynamic Random-Access Memory (SDRAM), Rambus Dynamic Random-Access Memory (RDRAM), Double Data Rate Synchronous Dynamic Random-Access Memory (DDR SDRAM), Fast Page Dynamic Random-Access Memory (FP DRAM), Extended Data Output Dynamic Random-Access Memory (EDO DRAM)
3) By Application: Automotive, Data Centers, Industrial Automation, Information Technology (IT) And Telecommunications

Asia-Pacific was the largest region in the dynamic random access memory market in 2023. North America is expected to be the fastest-growing region in the forecast period. The regions covered in the dynamic random access memory market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.

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Major Driver Impacting Market Growth

The increasing demand for digital electronics is expected to propel the growth of the dynamic random access memory market going forward. Digital electronics refers to a field of electronics that involves the study of digital signals and the engineering of devices that use or produce them. The demand for digital electronics is increasing due to advancements in cloud computing, technological advancements, and high-speed connectivity. Dynamic random access memory improves the overall performance of digital systems by providing faster access to data than storage mediums, including hard disk drives in digital electronics. For instance, in May 2022, according to a report published by the Japan Electronics and Information Technology Industries Association, a Japan-based trade organization for the electronics and IT industries, the production of electrical devices and components in 2022 reached $29333.19 million, up from $5174.54 million in 2021. Therefore, the increasing demand for digital electronics is driving the growth of the dynamic random access memory market.

Key Industry Players

Major companies operating in the dynamic random access memory market are Samsung Electronics Co Ltd., Intel Corporation, SK Hynix Inc., Fujitsu Limited, Micron Technology Inc., Advanced Micro Devices Inc. (AMD), Texas Instruments Incorporated (TI), Infineon Technologies AG, Delta Electronics Inc., Kingston Technology Company Inc., ON Semiconductor Corporation, Powerchip Semiconductor Manufacturing Corp., Nanya Technology Corporation, ChipMOS Technologies Inc., Elite Semiconductor Microelectronics Technology Inc., Integrated Silicon Solution Inc. (ISSI), Apacer Technology Inc., Transcend Information Inc., EverSpin Technologies, ATP Electronics Inc., Viking Technology, GSI Technology Inc., Centon Electronics Inc., Etron Technology Inc., Elpida Memory Inc., Winbond Electronics Corporation, ProMOS Technologies Inc., Alliance Memory Inc.

The dynamic random access memory market report table of contents includes:

1. Executive Summary

2. Dynamic Random Access Memory Market Characteristics

3. Dynamic Random Access Memory Market Trends And Strategies

4. Dynamic Random Access Memory Market – Macro Economic Scenario

5. Global Dynamic Random Access Memory Market Size and Growth
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32. Global Dynamic Random Access Memory Market Competitive Benchmarking

33. Global Dynamic Random Access Memory Market Competitive Dashboard

34. Key Mergers And Acquisitions In The Dynamic Random Access Memory Market

35. Dynamic Random Access Memory Market Future Outlook and Potential Analysis

36. Appendix

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