Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Report 2024: Growth Rate, Major Segments And Regions | Broadcom Inc., Semiconductor Components Industries LLC, NEC Corporation, Texas Instruments Incorporated

The Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Global Market Report 2024 by The Business Research Company provides market overview across 60+ geographies in the seven regions – Asia-Pacific, Western Europe, Eastern Europe, North America, South America, the Middle East, and Africa, encompassing 27 major global industries. The report presents a comprehensive analysis over a ten-year historic period (2010-2021) and extends its insights into a ten-year forecast period (2023-2033).

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According to The Business Research Company’s Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Global Market Report 2024, The gallium arsenide (GaAs) radio frequency (RF) semiconductor market size is expected to see strong growth in the next few years. It will grow to $2.84 billion in 2028 at a compound annual growth rate (CAGR) of 7.9%. The growth in the forecast period can be attributed to growth in the demand for high-performance wireless devices, more efficient and powerful RF semiconductor devices, renewable energy solutions continues to grow, demand for advanced RF devices, the need for improved radar. Major trends in the forecast period include advanced wireless communication technologies is fueling, advancements in gaas technology, growth in automotive and energy sectors, expansion in emerging economies, and increasing importance of advanced rf devices in aerospace and defense.

The growing penetration of 5G technology is expected to propel the growth of the gallium arsenide (GaAs) radio frequency (RF) semiconductor market going forward. 5G is the latest generation of mobile networks, offering improved data speeds, reduced latency, and more dependable connections. The penetration of 5G technology is rising due to rising demand for faster, more reliable mobile internet, driven by the growth of smartphones and data-heavy apps. GaAs RF semiconductors are vital for 5G technology as they offer high electron mobility and operate at higher frequencies, improving signal transmission and reception for enhanced speed, capacity, and coverage. For instance, in September 2023, according to 5G Americas, a US-based industry trade organization, North America’s 5G penetration rate reached an exceptional 40%, with a growth rate of 25.5% in the first half of 2023. Projections indicate North America’s 5G connections will reach a remarkable 669 million by 2028. Therefore, the growing penetration of 5G technology is a driver for the gallium arsenide (GaAs) radio frequency (RF) semiconductor market.

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The gallium arsenide (GaAs) radio frequency (RF) semiconductor market covered in this report is segmented –
1) By Device: Power Amplifier, Low Noise Amplifier, Filter And Duplexer, Radiofrequency (Rf) Mixer, Switch, Other Devices
2) By Frequency: Ultra-High Frequency (Uhf), Very High Frequency (Vhf)
3) By Operating Voltage: Up To 5 V, 5.1 To 20 V, Above 20 V
4) By End-Use: Telecommunication, Consumer Devices, Aerospace, Defense And Sitcom, Automotive, Community Antenna Television (Catv) And Wired Broadband, Other End-Uses

Major companies operating in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market are advancing pseudomorph high-electron-mobility transistor (pHEMT) technology to enhance performance in high-frequency applications, aiming to achieve higher efficiency and improved signal processing capabilities. Pseudomorph high-electron-mobility transistor (pHEMT) technology refers to an advanced semiconductor technology used to create high-performance transistors. For instance, in June 2022, WIN Semiconductors Corp., a Taiwan-based semiconductor company, launched PP10-20. It is the latest 0.1µm gallium arsenide (GaAs) pHEMT technology, an advancement over its PP10 platform. This second-generation technology offers significantly enhanced transistor gain, with an improved transit frequency (fT) of 160 GHz and a maximum oscillation frequency (fmax) of 240 GHz, while maintaining reliable 4V operation crucial for backhaul power amplifiers and high-linearity receivers from W-band to D-band.

The gallium arsenide (gaas) radio frequency (rf) semiconductor market report table of contents includes:
1. Executive Summary
2. Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Characteristics
3. Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Trends And Strategies
4. Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market – Macro Economic Scenario
5. Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Size and Growth
……………….
32. Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Competitive Benchmarking
33. Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Competitive Dashboard
34. Key Mergers And Acquisitions In The Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market
35. Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Future Outlook and Potential Analysis
36. Appendix

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