How big is the gallium arsenide (gaas) radio frequency (rf) semiconductor market today, and what are its future growth expectations?
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market size has grown strongly in recent years. It will grow from $2.1 billion in 2024 to $2.27 billion in 2025 at a compound annual growth rate (CAGR) of 8.1%. The growth in the historic period can be attributed to increasing demand for high-performance wireless devices, advancements in GaAs technology, growth in the automotive industry, increasing importance of advanced RF devices, smart grid, and renewable energy technologies.
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market size is expected to see strong growth in the next few years. It will grow to $3.06 billion in 2029 at a compound annual growth rate (CAGR) of 7.8%. The growth in the forecast period can be attributed to growth in the demand for high-performance wireless devices, more efficient and powerful RF semiconductor devices, renewable energy solutions continues to grow, demand for advanced RF devices, the need for improved radar. Major trends in the forecast period include advanced wireless communication technologies is fueling, advancements in gaas technology, growth in automotive and energy sectors, expansion in emerging economies, and increasing importance of advanced rf devices in aerospace and defense.
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Which industry factors have accelerated the gallium arsenide (gaas) radio frequency (rf) semiconductor market’s expansion?
The growing penetration of 5G technology is expected to propel the growth of the gallium arsenide (GaAs) radio frequency (RF) semiconductor market going forward. 5G is the latest generation of mobile networks, offering improved data speeds, reduced latency, and more dependable connections. The penetration of 5G technology is rising due to rising demand for faster, more reliable mobile internet, driven by the growth of smartphones and data-heavy apps. GaAs RF semiconductors are vital for 5G technology as they offer high electron mobility and operate at higher frequencies, improving signal transmission and reception for enhanced speed, capacity, and coverage. For instance, in September 2023, according to 5G Americas, a US-based industry trade organization, North America’s 5G penetration rate reached an exceptional 40%, with a growth rate of 25.5% in the first half of 2023. Projections indicate North America’s 5G connections will reach a remarkable 669 million by 2028. Therefore, the growing penetration of 5G technology is a driver for the gallium arsenide (GaAs) radio frequency (RF) semiconductor market.
What are the primary segments of the gallium arsenide (gaas) radio frequency (rf) semiconductor market?
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market covered in this report is segmented –
1) By Device: Power Amplifier, Low Noise Amplifier, Filter And Duplexer, Radiofrequency (Rf) Mixer, Switch, Other Devices
2) By Frequency: Ultra-High Frequency (Uhf), Very High Frequency (Vhf)
3) By Operating Voltage: Up To 5 V, 5.1 To 20 V, Above 20 V
4) By End-Use: Telecommunication, Consumer Devices, Aerospace, Defense And Sitcom, Automotive, Community Antenna Television (Catv) And Wired Broadband, Other End-Uses
Subsegments:
1) By Power Amplifier: RF Power Amplifiers, Microwave Power Amplifiers, Wideband Power Amplifiers, Low Power GaAs Amplifiers
2) By Low Noise Amplifier (LNA): Broadband LNAs, Narrowband LNAs, Cryogenic LNAs, Ultra-Low Noise GaAs Amplifiers
3) By Filter And Duplexer: Bandpass Filters, Low-Pass Filters, High-Pass Filters, RF Duplexers, Diplexers
4) By Radiofrequency (RF) Mixer: Active RF Mixers, Passive RF Mixers, Double-Balanced Mixers, Single-Balanced Mixers
5) By Switch: Single-Pole Double-Throw (SPDT) Switches, Single-Pole Multi-Throw (SPMT) Switches, RF PIN Diode Switches, GaAs FET Switches
6) By Other Devices: Oscillators, Phase Shifters, Attenuators, Voltage-Controlled Oscillators (VCOs), Modulators And Demodulators
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Which firms are leading the gallium arsenide (gaas) radio frequency (rf) semiconductor market?
Major companies operating in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market are Broadcom Inc., Semiconductor Components Industries LLC, NEC Corporation, Texas Instruments Incorporated, Infineon Technologies AG, Murata Manufacturing Co. Ltd., NXP Semiconductors N.V., Analog Devices Inc., ON Semiconductor Corporation, Microchip Technology Inc., Skyworks Solutions Inc., Keysight Technologies Inc., Qorvo Inc., Maxim Integrated Products Inc., United Monolithic Semiconductors S.A.S., RF Micro Devices Inc., WIN Semiconductors Corp., TriQuint Semiconductor Inc., OMMIC S.A.S., Vital Materials Co. Ltd
Which market trends are set to define the future of the gallium arsenide (gaas) radio frequency (rf) semiconductor market?
Major companies operating in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market are advancing pseudomorph high-electron-mobility transistor (pHEMT) technology to enhance performance in high-frequency applications, aiming to achieve higher efficiency and improved signal processing capabilities. Pseudomorph high-electron-mobility transistor (pHEMT) technology refers to an advanced semiconductor technology used to create high-performance transistors. For instance, in June 2022, WIN Semiconductors Corp., a Taiwan-based semiconductor company, launched PP10-20. It is the latest 0.1µm gallium arsenide (GaAs) pHEMT technology, an advancement over its PP10 platform. This second-generation technology offers significantly enhanced transistor gain, with an improved transit frequency (fT) of 160 GHz and a maximum oscillation frequency (fmax) of 240 GHz, while maintaining reliable 4V operation crucial for backhaul power amplifiers and high-linearity receivers from W-band to D-band.
Which geographic trends are shaping the gallium arsenide (gaas) radio frequency (rf) semiconductor market, and which region has the highest market share?
Asia-Pacific was the largest region in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market in 2023. The regions covered in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
What Does The Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Report 2025 Offer?
The gallium arsenide (gaas) radio frequency (rf) semiconductor market research report from The Business Research Company offers global market size, growth rate, regional shares, competitor analysis, detailed segments, trends, and opportunities.
A gallium arsenide (GaAs) radio frequency (RF) semiconductor is a semiconductor made from the elements gallium and arsenic, specifically designed for use in high-frequency electronic devices. GaAs RF semiconductors are frequently utilized in wireless communication systems, radar, and satellite technology due to their high electron mobility, wide bandgap, and superior performance at high frequencies.
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