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How much is the silicon carbide (sic) diodes market worth, and how is it expected to expand?
The silicon carbide (SiC) diodes market size has grown rapidly in recent years. It will grow from $1.9 billion in 2024 to $2.12 billion in 2025 at a compound annual growth rate (CAGR) of 11.3%. The growth in the historic period can be attributed to increasing demand for energy efficiency, growth in the renewable energy sector, increasing investment in industrial automation, development of smart grids, and miniaturization of electronic devices.
The silicon carbide (SiC) diodes market size is expected to see rapid growth in the next few years. It will grow to $3.2 billion in 2029 at a compound annual growth rate (CAGR) of 10.9%. The growth in the forecast period can be attributed to growth in electric vehicle production, continuous innovation in SiC manufacturing, increasing emphasis on energy efficiency, emerging opportunities in 5G technology, and a global shift towards sustainable energy solutions. Major trends in the forecast period include integration with renewable energy systems, advancements in SiC manufacturing processes, proliferation of smart grids and energy storage systems, enhanced SiC diode integration in consumer electronics, and adoption of advanced driver assistance systems.
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Which industry factors have accelerated the silicon carbide (sic) diodes market’s expansion?
The growing demand for electric vehicles (EVs) is expected to drive the silicon carbide (SiC) diode market going forward. Electric vehicles are automobiles propelled by electric motors and powered by rechargeable batteries or other energy storage devices instead of internal combustion engines fueled by gasoline or diesel. The adoption of electric vehicles (EVs) is rising due to environmental concerns, expanded charging infrastructure, and government incentives. Silicon carbide (SiC) diodes improve electric vehicle (EV) efficiency by minimizing switching losses, enhancing thermal conductivity, and enabling quick switching capabilities, thereby reducing the size and weight of power components. This leads to improved overall performance and energy efficiency in EV powertrains. For instance, in April 2023, according to the International Energy Agency, a France-based autonomous intergovernmental organization, electric car sales exceeded 10 million in 2022 and are nearing 14 million in 2023, with firm objectives increasing to 35% by 2030. Therefore, the growing demand for electric vehicles (EVs) will drive the silicon carbide (SiC) diode market.
What are the primary segments of the silicon carbide (sic) diodes market?
The silicon carbide (SiC) diodes market covered in this report is segmented –
1) By Type: Schottky Diodes, Junction Diodes, P-Insulator-N Diodes (PIN Diodes), Other Types
2) By Forward Current: 2 To 5 Amperes, 6 To 10 Amperes, 11 To 20 Amperes, 21 To 40 Amperes, Above 40 Amperes
3) By Reverse Voltage: 650 Voltage, 1200 Voltage, 1700 Voltage, 3300 Voltage
4) By Application: Automotive, Medical Imaging, Communication, Data Centers, Defense, Photovoltaic Solutions, Other Applications
Subsegments:
1) By Schottky Diodes: Standard Schottky Diodes, Low-Forward Voltage Schottky Diodes, High-Temperature Schottky Diodes
2) By Junction Diodes: Standard Junction Diodes, High-Efficiency Junction Diodes, High-Voltage Junction Diodes
3) By P-Insulator-N Diodes (PIN Diodes): Power PIN Diodes, High-Speed PIN Diodes, Low-Power PIN Diodes
4) By Other Types: Varactor Diodes, Zener Diodes, Avalanche Diodes, MOS Diodes (Metal-Oxide-Semiconductor Diodes), Shockley Diodes
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Which firms are leading the silicon carbide (sic) diodes market?
Major companies operating in the silicon carbide (SiC) diodes market are Mitsubishi Electric Corporation, TOSHIBA CORPORATION, Avnet Inc., STMicroelectronics, Infineon Technologies AG, Renesas Electronics Corporation, ON Semiconductor, Microchip Technology Inc., Qorvo Inc., ROHM CO. LTD., Vishay Intertechnology Inc., Littelfuse Inc., Nexperia, Fuji Electric Co. Ltd., Diodes Incorporated, Alpha and Omega Semiconductor, WOLFSPEED INC., Semikron Danfoss, IXYS Corporation, Sanken Electric Co. Ltd., GeneSiC Semiconductor Inc
Which market trends are set to define the future of the silicon carbide (sic) diodes market?
Major companies operating in the silicon carbide (SiC) diode market are focused on developing advanced products such as the third-generation silicon carbide Schottky barrier chip to enhance performance and efficiency in high-power applications. A silicon carbide Schottky barrier chip uses a Schottky barrier diode design to achieve high breakdown voltage, low forward voltage drops, high switching speeds, and superior thermal conductivity. For instance, in July 2023, Toshiba Electronic Devices & Storage Corporation, a Japan-based electronics company, launched the TRSxxx65H series. This diode significantly improves, with a low forward voltage of 1.2V, 17% lower than the previous generation’s 1.45V. This lowering increases power conversion efficiency substantially. The series can handle forward DC currents (IF(DC)) up to 12A and square-wave surge currents (IFSM) up to 640A. It comes in both TO-220-2L and DFN8×8 packages. The diodes use an optimized junction barrier Schottky (JBS) structure. This design lowers leakage current and power dissipation, enhancing effectiveness in industrial applications.
Which geographic trends are shaping the silicon carbide (sic) diodes market, and which region has the highest market share?
North America was the largest region in the silicon carbide (SiC) diode market in 2024. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in the silicon carbide (SiC) diodes market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
What Does The Silicon Carbide (SiC) Diodes Market Report 2025 Offer?
The silicon carbide (sic) diodes market research report from The Business Research Company offers global market size, growth rate, regional shares, competitor analysis, detailed segments, trends, and opportunities.
Silicon carbide (SiC) diodes are semiconductor devices made up of silicon carbide, which has been classified for its high breakdown voltage, thermal conductivity, and low forward voltage drop. SiC diodes are utilized in power electronics applications that require high efficiency, temperatures, and frequencies.
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